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| SMD Type MOS Field Effect Transistor 2SK1584 SOT-89 MOSFET Unit: mm +0.1 1.50-0.1 Features Directly driven by Ics having a 5V P Has low on-state resistance RDS(on)=2.0 MAX.@VGS=4.0V,ID=0.3A RDS(on)=1.5 MAX.@VGS=10V,ID=0.3A +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10ms, duty cycle 5% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 30 20 0.5 1.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 1.3 350 1.85 440 1.2 0.65 60 VDS=5.0V,VGS=0,f=1MHZ 50 9 80 ID=0.3A,VGS(on)=4V,RL=33 ,VDD=10V,RG=10 270 100 110 2.0 1.5 pF pF pF ns ns ns ns Min Typ Max 10 10 2.5 Unit A A V ms VGS(off) VDS=10V,ID=0.1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=5.0V,ID=0.5A VGS=4.0V,ID=0.3A VGS=10V,ID=0.3A Marking Marking NH www.kexin.com.cn 1 |
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